130 a fast thyristor/ diode and thyristor/ thyristor bulletin i27092 rev. a 09/97 1 irk.f132.. series int-a-pak ? power modules www.irf.com features fast turn-off thyristor fast recovery diode high surge capability electrically isolated baseplate 3000 v rms isolating voltage industrial standard package ul e78996 approved description these series of int-a-pak modules are intended for applications such as self-commutated inverters, dc choppers, electronic welders, induction heating and others where fast switching characteristics are required. parameters irk.f132.. units i t(av) 130 a @ t c 90 c i t(rms) 293 a i tsm @ 50hz 3210 a @ 60hz 3360 a i 2 t @ 50hz 51.5 ka 2 s @ 60hz 47.0 ka 2 s i 2 ? t 515 ka 2 ? s t q 15 s t rr 2s v drm / v rrm up to 800 v t j range - 40 to 125 o c major ratings and characteristics
irk.f132.. series 2 bulletin i27092 rev. a 09/97 www.irf.com electrical specifications voltage ratings voltage v rrm /v drm , maximum repetitive v rsm , maximum non- i rrm /i drm max. type number code peak reverse voltage repetitive peak rev. voltage @ t j = 125c vvma 04 400 400 08 800 800 i t(av) maximum average on-state current 130 a 180 conduction, half sine wave @ case temperature 90 c i t(rms) maximum rms current 293 a t c = 90c, as ac switch i tsm maximum peak, one-cycle, 3210 a t = 10ms no voltage non-repetitive surge current 3360 t = 8.3ms reapplied 2700 t = 10ms 100% v rrm 2825 t = 8.3ms reapplied sinusoidal half wave, i 2 t maximum i 2 t for fusing 51.5 ka 2 s t = 10ms no voltage initial t j = 125c 47.0 t = 8.3ms reapplied 36.5 t = 10ms 100% v rrm 33.3 t = 8.3ms reapplied i 2 ? t maximum i 2 ? t for fusing 515 ka 2 ? s t = 0 to 10ms, no voltage reapplied v t(to)1 low level value of threshold voltage 1.16 v (16.7% x p x i t(av) < i < p x i t(av) ), t j = t j max. v t(to)2 high level value of threshold voltage 1.25 (i > p x i t(av) ), t j = t j max. r t1 low level value of on-state slope resistance 0.92 mw (16.7% x p x i t(av) < i < p x i t(av) ), t j = t j max. r t2 high level value of on-state slope resistance 0.77 (i > p x i t(av) ), t j = t j max. v tm maximum on-state voltage drop 1.71 v i pk = 600a, t j = t j max., t p = 10ms sine pulse i h maximum holding current 600 ma t j = 25c, i t > 30 a i l typical latching current 1000 ma t j = 25c, v a = 12v, ra = 6 w , ig = 1a parameter irk.f132.. units conditions on-state conduction frequency f units 50hz 250 420 408 640 2465 3460 a 400hz 320 530 485 800 1470 2150 a 2500hz 240 390 400 650 540 830 a 5000hz 210 340 340 530 340 530 a 10000hz 160 275 300 415 - - a recovery voltage vr 50 50 50 50 50 50 v voltage before turn-on vd 80% v drm 80% v drm 80% v drm v rise of on-state current di/dt 50 50 - - - - a/ s case temperature 90 60 90 60 90 60 c equivalent values for rc circuit 47 w / 0.22 f 47 w / 0.22 f 47 w / 0.22 f i tm i tm 180 o el 100s i tm 180 o el current carrying capacity irk.f132.. 30
irk.f132.. series 3 bulletin i27092 rev. a 09/97 www.irf.com t j max. junction operating temperature range - 40 to 125 c t stg max. storage temperature range - 40 to 150 r thjc max. thermal resistance, junction to 0.17 k/w per junction, dc operation case r thc-hs max. thermal resistance, case to 0.035 k/w mounting surface flat and greased heatsink per module t mounting torque 10% iap to heatsink 4 - 6 (35 - 53) nm busbar to iap 4 - 6 (35 - 53) (lb*in) wt approximate weight 500 (17.8) g (oz) dv/dt maximum critical rate of rise of off-state 1000 v/s t j = 125c., exponential to = 67% v drm voltage v ins rms isolation voltage 3000 v 50 hz, circuit to base, t j = 25c, t = 1 s i rrm maximum peak reverse and off-state 30 ma t j = 125c, rated v drm /v rrm applied i drm leakage current parameter irk.f132.. units conditions blocking di/dt maximum non-repetitive rate of rise 800 a/s gate drive 20v, 20 w , tr 1ms, v d = 80% v drm t j = 25c t rr maximum recovery time 2 s i tm = 350a, di/dt = -25a/s, v r = 50v, t j = 25c t q maximum turn-off time l i tm = 350a, t j = 125c, di/dt = -25a/s, 15 s v r = 50v, dv/dt = 400v/s linear to 80% v drm parameter irk.f132.. units conditions switching parameter irk.f132.. units conditions triggering p gm maximum peak gate power 60 w f = 50 hz, d% = 50 p g(av) maximum peak average gate power 10 w t j = 125c, f = 50hz, d% = 50 i gm maximum peak positive gate current 10 a t j = 125c, t p < 5ms - v gm maximum peak negative gate voltage 5 v i gt max. dc gate current required to trigger 200 ma t j = 25c, v ak 12v, ra = 6 v gt dc gate voltage required to trigger 3 v i gd dc gate current not to trigger 20 ma t j = 125c, rated v drm applied v gd dc gate voltage not to trigger 0.25 v parameter irk.f132.. units conditions thermal and mechanical specifications a mounting compound is recommended. the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. use of cable lugs is not recommendd, busbars should be used and restrained during tightening. threads must be lubricated with a compound
irk.f132.. series 4 bulletin i27092 rev. a 09/97 www.irf.com d r thjc conduction (the following table shows the increment of thermal resistance r thjc when devices operate at different conduction angles than dc) conduction angle sinusoidal conduction rectangular conduction units conditions 180 0.016 0.011 k/w t j = 125c 120 0.019 0.020 90 0.024 0.026 60 0.035 0.037 30 0.060 0.060 irk t f 13 2 - 08 h l n 1 2 3 1 - module type 2 - circuit configuration 3 - fast scr 4 - current rating: i t(av) x 10 rounded 5 - 1 = option with spacers and longer terminal screws 2 = option with standard terminal screws 6 - voltage code: code x 100 = v rrm (see voltage ratings table) 7 - dv/dt code: h 400v/s 8 -t q code: l 15s 9 - none = standard devices n = aluminum nitrade substrate 4 device code ordering information table 5 6 7 8 8 note: to order the optional hardware see bulletin i27900
irk.f132.. series 5 bulletin i27092 rev. a 09/97 www.irf.com - all dimensions in millimeters (inches) - dimensions are nominal - full engineering drawings are available on request - ul identification number for gate and cathode wire: ul 1385 - ul identification number for package: ul 94v0 outline table for all types a b c d e irk...1 25 (0.98) ---- ---- 41 (1.61) 47 (1.85) irk...2 23 (0.91) 30 (1.18) 36 (1.42) ---- ---- irktf.. irkhf.. irklf.. irkuf.. irkvf.. irkkf.. irknf.. fig. 1 - current ratings characteristics fig. 2 - current ratings characteristics 70 80 90 100 110 120 130 0 20 40 60 80 100 120 14 0 30 60 90 120 180 average on-state current (a) maximum allowable case temperature ( c ) conduction angle irk.f132.. series r (dc) = 0.17 k/w thjc 70 80 90 100 110 120 130 0 25 50 75 100 125 150 175 200 22 5 dc 30 60 90 120 180 averag e on -state current (a) maximum allowable case temperature ( c ) conduction period irk.f132.. series r (dc) = 0.17 k/w thjc
irk.f132.. series 6 bulletin i27092 rev. a 09/97 www.irf.com fig. 7 - on-state voltage drop characteristics fig. 8 - thermal impedance z thjc characteristic fig. 5 - maximum non-repetitive surge current fig. 6 - maximum non-repetitive surge current fig. 4 - on-state power loss characteristics fig. 3 - on-state power loss characteristics 0 25 50 75 100 125 150 175 200 0 204060801001201 40 rms limit conduction angle maximum average on-state power loss (w ) average on-state current (a) 180 120 90 60 30 irk.f132.. series per junction t = 125 c j 0 50 100 150 200 250 300 0 40 80 120 160 200 24 0 dc 180 120 90 60 30 rms limit conduction period maximum average on-sta te power loss (w ) average on-state current (a) irk.f132.. series per junction t = 125 c j 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 11010 0 number of equal amplitude half cycle current pulses (n ) at any rated load condition and with rated v applied following surge. rrm peak half sine wave on-state current (a ) irk.f132.. series per junction initial t = 125 c @ 60 hz 0.0083 s @ 50 hz 0.0100 s j 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 3200 0.01 0.1 1 peak half sine wave on-state current (a ) pulse train duration (s ) maximum non repetitive surge curren t versus pulse train duration. contro l of conduction may not be maintained . irk.f132.. series per junction in itial t = 125 c no voltage reapp lied rated v reapplied rrm j 10 100 1000 10000 0.5 1 1.5 2 2.5 3 3.5 4 t = 25 c j instantaneous on-state current (a) instantaneo us on-state voltage (v) irk.f132.. series per junct ion t = 125c j 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 10 0 square wave puls e duration (s) thjc transient thermal impedance z (k/w) irk.f132.. series per junction steady state value r = 0.17 k/w (dc operation) thjc
irk.f132.. series 7 bulletin i27092 rev. a 09/97 www.irf.com fig. 9 - reverse recovery charge characteristics fig. 10 - reverse recovery current characteristics fig. 11 - frequency characteristics fig. 12 - frequency characteristics 0 30 60 90 120 150 0 2040608010 0 maximum reverse recovery current - irr (a ) rate of fall of on-state current - di/dt (a/ s) irk.f132.. series t = 125 c j i = 500 a tm 300 a 200 a 100 a 50 a 0 50 100 150 200 250 0 2040608010 0 maximum reverse recovery charge - qrr ( c ) rate of fall of on-state current - di/dt (a/ s) i = 500 a tm 300 a 200 a 50 a irk.f132.. series t = 125 c j 100 a 1e2 1e3 1e4 1e1 1e2 1e3 1e 4 50 hz 400 1000 2500 5000 pulse basewidth ( s) peak on-state current (a) irk.f132.. series sinusoidal pulse t = 90 c c snubber circuit r = 47 ohms c = 0.22 f v = 80% v s s d drm 150 tp 1e4 1e1 1e2 1e3 1e 4 50 hz 400 1000 2500 5000 pulse base width ( s) 150 snubber c ircuit r = 47 ohms c = 0.22 f v = 80% v s s d dr m irk.f132.. series sinusoidal pulse t = 60 c c tp 1e1 1e2 1e3 1e4 1e1 1e2 1e3 1e 4 50 hz 400 1000 2500 5000 pulse basewidth ( s) peak on-state current (a) 150 snubber circuit r = 47 ohms c = 0.22 f v = 80% v s s d drm irk .f132.. series tra pezoid al pu lse t = 90c, di/dt 50a/s c tp 1e4 1 e1 1e2 1e3 1e 4 50 hz 400 1000 2500 5000 pulse basewidth ( s) snubber circuit r = 47 ohms c = 0.22 f v = 80% v s s d drm 150 irk.f132.. series trapezoidal pulse t = 90c, di/d t 100a/s c tp 1e1
irk.f132.. series 8 bulletin i27092 rev. a 09/97 www.irf.com fig. 15 - gate characteristics fig. 13 - frequency characteristics fig. 14 - maximum on-state energy power loss characteristics 1e2 1e3 1e4 1e1 1e2 1e3 1e 4 50 hz 400 1000 2500 5000 pulse basewidth ( s) peak on-state current (a) 150 snubber circuit r = 47 ohms c = 0.22 f v = 80% v s s d dr m irk.f132.. series trapezoidal pulse t = 60c, di/dt 50a/s c tp 1e4 1 e1 1e2 1e3 1e 4 50 hz 400 1000 2500 5000 pulse basewidth ( s) snubber circuit r = 47 ohms c = 0.22 f v = 80% v s s d drm 150 irk.f132. . series tr ape zo ida l pul se t = 60c, di /dt 100a/ s c tp 1e1 1e1 1e2 1e3 1e4 1e11e21e31e 4 1 0.1 puls e basewidth ( s) peak on-state current (a) irk.f132.. series sinuso idal pulse 10 joules per pulse 5 2. 5 0. 5 0.25 0. 05 tp 1e4 1 e1 1e2 1e3 1e 4 1 0.1 pulse basewidth ( s) 10 joules per pulse 5 2. 5 0.5 0. 25 0. 05 irk.f132..series trapezo idal pulse di/dt 50a/ s tp 1e1 0.1 1 10 100 0.01 0.1 1 10 10 0 vgd ig d (b) (a) tj=25 c tj=125 c tj=-40 c (1) (2 ) (3 ) instantaneous gate current (a) instantaneous gate voltage (v) a) recommended load line for b) recommended load line for <=30% rated di/dt : 10v, 10ohms rated di/dt : 20v, 10ohms; tr<=1 s tr<=1 s rectangular gate pulse (1) pgm = 10w, tp = 20ms (2) pgm = 20w, tp = 10ms (3) pgm = 40w, tp = 5ms (4) pgm = 60w, tp = 3.3ms irk.f132.. series frequency limited by pg(av) (4 )
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